Interface engineering using Y2O3 scaffold to enhance the thermoelectric performance of CsSnI3 thin film

被引：34

作者：

Baranwal, Ajay Kumar ^{[1
]}

Saini, Shrikant ^{[2
]}

Wang, Zhen ^{[3
]}

Hirotani, Daisuke ^{[3
]}

Yabuki, Tomohide ^{[2
]}

Iikubo, Satoshi ^{[3
]}

Miyazaki, Koji ^{[2
]}

Hayase, Shuzi ^{[1
]}

机构：

[1] Univ Electrocommun, I Powered Energy Syst Res Ctr, 1-5-1 Chofugaoka, Chofu, Tokyo 1828585, Japan

[2] Kyushu Inst Technol, Dept Mech & Control Engn, 1-1 Sensuicho, Kitakyushu, Fukuoka 8048550, Japan

[3] Kyushu Inst Technol, Grad Sch Life Sci & Syst Engn, 2-4 Hibikino, Kitakyushu, Fukuoka 8080196, Japan

来源：

ORGANIC ELECTRONICS | 2020年 / 76卷

基金：

日本科学技术振兴机构;

关键词：

CsSnI3; Y2O3; Perovskite; Thermoelectric film; SOLAR-CELLS; SEMICONDUCTORS; CONDUCTIVITY; PEROVSKITES; DEFECTS;

D O I：

10.1016/j.orgel.2019.105488

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Solution processed Cesium Tin halide perovskites (CsSnI3) are inorganic crystal to be explored for thermoelectric applications. Here, we report a novel strategy using an inorganic Y2O3 scaffold to improve the thermoelectric performance. The additional Y2O3 influence the CsSnI3 crystal growth and favor more conducting behavior with intrinsic defects (Sn4+) formation. Therefore, the resulting solution processed composite film Y2O3/CsSnI3 show much improved electrical conductivity of similar to 310 S/cm as compared to similar to 98 S/cm of pristine CsSnI3 film. Under the influence of Y2O3, the resulting phonon scattering path was enhanced significantly due to formed defects/vacancy and reduced CsSnI3 crystal size, which showed a reduction in thermal conductivity from 0.74 W/mK to 0.28 W/mK. This work paves a new paradigm to improve the thermoelectric performance of solution based thermoelectric generator.

引用

页数：6

共 42 条

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[Anonymous], [No title captured]

[2]

[Anonymous], [No title captured]

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