Light-induced narrowing of excitonic absorption lines in GaN

被引：11

作者：

Trautman, P ^{[1
]}

Pakula, K ^{[1
]}

Bozek, R ^{[1
]}

Baranowski, JM ^{[1
]}

机构：

[1] Univ Warsaw, Inst Expt Phys, PL-00681 Warsaw, Poland

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 17期

关键词：

D O I：

10.1063/1.1622788

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The fundamental absorption edge of GaN has been investigated in GaN/AlxGa1-xN heterostructures. A broad excitonic line is observed after the sample has been cooled in darkness. A metastable narrowing occurs and three excitonic absorption lines are observed after the sample has been illuminated. Measurements of this effect have been made as a function of temperature and photon energy. It seems that the broadening is induced by an electric field present around dislocations in GaN. This field is reduced by free carriers created during illumination, which results in narrowing of the excitonic lines. (C) 2003 American Institute of Physics.

引用

页码：3510 / 3512

页数：3

共 19 条

[1] Growth and applications of Group III nitrides [J].