A model for ⟨c plus a⟩ dislocation transmission across nano-spaced parallel basal stacking faults in a HCP alloy

被引：8
作者：
Gu, Pei [1 ]
Zhu, Yuntian [2 ,3 ]
Mathaudhu, Suveen N. [2 ,4 ]
机构：
[1] Hohai Univ, Dept Engn Mech, Nanjing 210098, Jiangsu, Peoples R China
[2] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA
[3] Nanjing Univ Sci & Technol, Sch Mat Sci & Engn, Nanjing 210094, Jiangsu, Peoples R China
[4] Univ Calif Riverside, Dept Mech Engn, Riverside, CA 92521 USA
来源：
PHILOSOPHICAL MAGAZINE LETTERS | 2015年 / 95卷 / 01期
基金：
美国国家科学基金会;
关键词：
flow stress; nano-structure; stacking fault; plastic deformation; SEVERE PLASTIC-DEFORMATION; RATE SENSITIVITY; FLOW-STRESS; NANOCRYSTALLINE MATERIALS; DEPENDENT DEFORMATION; NANOSCALE TWINS; METALS; STRENGTH; DUCTILITY; COPPER;
D O I：
10.1080/09500839.2015.1008066
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We develop a model for recently observed <c + a> dislocation transmission across nano-spaced parallel basal stacking faults in hexagonal close-packed (HCP) Mg microcrystalline grains. The model theoretically predicts nanospace-dependent yield strength that is in good agreement with experimental data. Additionally, it theoretically predicts activation volume and strain rate sensitivity.
引用
收藏
页码：58 / 66
页数：9
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