Endurance degradation mechanisms in TiN\Ta2O5\Ta resistive random-access memory cells

被引：43

作者：

Chen, C. Y. ^{[1
,2
]}

Goux, L. ^{[1
]}

Fantini, A. ^{[1
]}

Clima, S. ^{[1
]}

Degraeve, R. ^{[1
]}

Redolfi, A. ^{[1
]}

Chen, Y. Y. ^{[1
]}

Groeseneken, G. ^{[1
,2
]}

Jurczak, M. ^{[1
]}

机构：

[1] IMEC, B-3001 Leuven, Belgium

[2] Katholieke Univ Leuven, Dept Elektrotech ESAT MICAS, B-3001 Leuven, Belgium

来源：

APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 05期

关键词：

Calculations - Random access storage - Electrodes - Tantalum oxides - Tin - Titanium nitride;

D O I：

10.1063/1.4907573

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Impact of set/reset pulse duration and amplitude on the endurance failure modes of TiN\Ta2O5\Ta cells is investigated and is related to interaction between Oxygen and TiN bottom electrode during reset. Hourglass electrical switching simulation of conductive filament temperature during reset transient and ab-initio calculation of reaction energy further support this degradation mechanism. Based on this understanding, endurance improvement is achieved by using shorter reset pulse and/or using inert Ru bottom electrode. (C) 2015 AIP Publishing LLC.

引用

页数：3

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