Defect photoluminescence of undoping ZnO films and its dependence on annealing conditions

被引：120

作者：

Lin, BX ^{[1
]}

Fu, ZX

Jia, YB

Liao, GH

机构：

[1] Univ Sci & Technol China, Struct Res Lab, Hefei 230026, Anhui, Peoples R China

[2] Univ Sci & Technol China, Dept Phys, Hefei 2300026, Anhui, Peoples R China

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2001年 / 148卷 / 03期

关键词：

D O I：

10.1149/1.1346616

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The undoping ZnO emitting films were deposited on Si substrates by de reactive sputtering. There are two peaks of photoluminescence (PL), centered at 3.18 eV (ultraviolet): and at 2.38 eV (green), to be observed in the samples. We investigated the dependence of PL spectra on annealing temperature and annealing atmosphere. According to the calculation of defect levels and the relationship between PL spectra and annealing conditions, we supposed that the green emission of ZnO films corresponds to the local level composed of the antisite defect O-Zn. (C) 2001 The Electrochemical Society. All rights reserved.

引用

页码：G110 / G113

页数：4

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