A 2.5-V 45-Gb/s decision circuit using SiGeBiCMOS logic

被引:29
作者
Dickson, TO [1 ]
Beerkens, R
Voinigescu, SP
机构
[1] Univ Toronto, Dept Elect & Comp Engn, Toronto, ON M5S 3G4, Canada
[2] STMicroelect, Ottawa, ON K2H 8R6, Canada
关键词
BiCMOS; current-mode logic; flip-flops; lownoise millimeter-wave (mm-wave); SiGeHBT; transformer; transimpedance amplifier;
D O I
10.1109/JSSC.2004.842828
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A 45-Gb/s BiCMOS decision circuit operating from a 2.5-V supply is reported. The full-rate retiming flip-flop operates from the lowest supply voltage of any silicon-based flip-flop demonstrated to date at this speed. MOS and SiGe heterojunction-bipolar-transistor (HBT) current-mode logic families are compared. Capitalizing on the best features of both families, a true BiCMOS logic topology is presented that allows for operation from lower supply voltages than pure HBT implementations without compromising speed. The topology, based on a BiCMOS cascode, can also be applied to a number of millimeter-wave (mm-wave) circuits. In addition to the retiming flip-flop, the decision circuit includes a broadband transimpedance preamplifier to improve sensitivity, a tuned 45-GHz clock buffer, and a 50-Omega output driver. The first mm-wave transformer is employed along the clock path to perform single-ended-to-differential conversion. The entire circuit, which is implemented in a production 130-nm BiCMOS process with 150-GHz f(T) SiGe HBT, consumes 288 mW from a 2.5-V supply, including only 58 mW from the flip-flop.
引用
收藏
页码:994 / 1003
页数:10
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