A 60 GHz Wideband High Output P1dB Up-conversion Image Rejection Mixer in 0.25 μM SiGe Technology

被引：8
|
作者：
Elkhouly, Mohamed [1 ]
Glisic, Srdjan [1 ]
Scheytt, Christoph [1 ]
机构：
[1] IHP Microelect, D-15236 Frankfurt, Oder, Germany
来源：
2010 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS | 2010年
关键词：
up-conversion mixer; linearity; 60; GHz; OP 1dB point;
D O I：
10.1109/SMIC.2010.5422944
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A high output 1dB compression point 60-GHz up-conversion mixer fabricated on 0.25 mu m SiGe:C technology is presented. It is based on the Gilbert cell and integrated with LO passive stacked Marchand balun to convert the LO single ended signal into differential. It employs tuned load consisting of spiral inductor and MIM capacitor to match the differential output to 100 ohm and to attenuate the image signal by 15 dB in the middle of the band. The conversion gain is 2.2-dB in 61 GHz and varies within 2 dB over 9 GHz band We achieve output 1-dB compression point of -3.4 dBm. To the best of our knowledge it is the highest output 1-dB compression point in silicon-based 60-GHz mixers. It consumes 10 mA from 3.3 V supply
引用
收藏
页码：49 / 52
页数：4
相关论文
共 47 条
  • [41] A Low-Power and High-Gain Ultra-Wideband Down-Conversion Active Mixer in 0.18-m SiGe Bi-CMOS Technology
    Chen, Jun-Da
    Wang, Song-Hao
    CIRCUITS SYSTEMS AND SIGNAL PROCESSING, 2017, 36 (07) : 2635 - 2653
  • [42] A 1-18-GHz High-Gain and Low-Voltage Down-Conversion Mixer in 0.18-μm CMOS Technology
    Chen, Jun-Da
    Jian, Meng-Kai
    IEEE ACCESS, 2023, 11 : 120944 - 120954
  • [43] Design and Analysis of a 0.01-to-6GHz 31dBm-P1dB 31.5%-PAE Distributed Power Amplifier in 0.25-μm GaAs Technology
    Meng Fanyi
    Liu Cha
    Hu Jianquan
    Mou Shouxian
    Ma Kaixue
    CHINESE JOURNAL OF ELECTRONICS, 2021, 30 (03) : 549 - 555
  • [44] Design and Analysis of a 0.01-to-6GHz 31dBm-P1dB 31.5%-PAE Distributed Power Amplifier in 0.25-μm GaAs Technology
    MENG Fanyi
    LIU Cha
    HU Jianquan
    MOU Shouxian
    MA Kaixue
    ChineseJournalofElectronics, 2021, 30 (03) : 549 - 555
  • [45] A Current-Mode mm-Wave Direct-Conversion Receiver with 7.5GHz Bandwidth, 3.8dB Minimum Noise-Figure and+1dBm P1dB,out Linearity for High Data Rate Communications
    Wu, Hao
    Wang, Ning-Yi
    Du, Yuan
    Kuan, Yen-Cheng
    Hsiao, Frank
    Lee, Sheau-Jiung
    Tsai, Ming-Hsien
    Jou, Chewn-Pu
    Chang, Mau-Chung Frank
    2013 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC), 2013, : 89 - 92
  • [46] QUBiC4G:: A fT/fmag=70/100GHz 0.25μm low power SiGe-BiCMOS production technology with high quality passives for 12.5Gb/s optical networking and emerging wireless applications up to 20GHz
    Deixler, P
    Colclaser, R
    Bower, D
    Bell, N
    De Boer, W
    Szmyd, D
    Bardy, S
    Wilbanks, W
    Barre, P
    van Houdt, M
    Paasschens, JCJ
    Veenstra, H
    vander Heijden, E
    Donkers, JJTM
    Slotboom, JW
    PROCEEDINGS OF THE 2002 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 2002, : 201 - 204
  • [47] A Low-Power and High-Gain Ultra-Wideband Down-Conversion Active Mixer in 0.18-μ\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\upmu $$\end{document}m SiGe Bi-CMOS Technology
    Jun-Da Chen
    Song-Hao Wang
    Circuits, Systems, and Signal Processing, 2017, 36 (7) : 2635 - 2653
12345