Room-temperature operation of 3.6 μm In0.53Ga0.47As/Al0.48In0.52As quantum cascade laser sources based on intracavity second harmonic generation

被引：18

作者：

Jang, M. ^{[1
]}

Adams, R. W. ^{[1
]}

Chen, J. X. ^{[2
,3
]}

Charles, W. O. ^{[2
,3
]}

Gmachl, C. ^{[2
,3
]}

Cheng, L. W. ^{[4
]}

Choa, F-S ^{[4
]}

Belkin, M. A. ^{[1
]}

机构：

[1] Univ Texas Austin, Dept Elect & Comp Engn, Austin, TX 78758 USA

[2] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA

[3] Princeton Univ, MIRTHE, Princeton, NJ 08544 USA

[4] Univ Maryland Baltimore Cty, Dept Comp Sci & Elect Engn, Baltimore, MD 21250 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 14期

关键词：

FREQUENCY-GENERATION; PERFORMANCE;

D O I：

10.1063/1.3491219

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We discuss a design of short-wavelength quantum cascade laser sources based on intracavity second harmonic generation. A passive heterostructure tailored for giant optical nonlinearity is integrated on top of an active region and patterned for quasiphase matching. We demonstrate operation of lambda approximate to 3.6 mu m lattice-matched InGaAs/AlInAs/InP sources with approximately 6 mu W of second-harmonic output at room temperature and conversion efficiency of approximately 130 mu W/W-2. Threshold current densities of devices with a nonlinear section were similar to that of the reference lasers without the nonlinear section. c 2010 American Institute of Physics. [doi:10.1063/1.3491219]

引用

页数：3

共 2 条

[1] Room-temperature operation of λ≈2.95μm In0.67Ga0.33As/Al0.57In0.43As quantum cascade laser source based on intracavity second harmonic generation
Jang, Min
Wang, Xiaojun
Troccoli, Mariano
Belkin, M. A.
2011 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2011,
[2] InGaAs/AlInAs quantum cascade laser sources based on intra-cavity second harmonic generation emitting in 2.6-3.6 micron range
Belkin, M. A.
Jang, M.
Adams, R. W.
Chen, J. X.
Charles, W. O.
Gmachl, C.
Cheng, L. W.
Choa, F. -S.
Wang, X.
Troccoli, M.
Vizbaras, A.
Anders, M.
Grasse, C.
Amann, M. -C.
NOVEL IN-PLANE SEMICONDUCTOR LASERS X, 2011, 7953

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