Mobility in epitaxial GaN: Limitations of free-electron concentration due to dislocations and compensation

被引：41
作者：
Gurusinghe, MN [1 ]
Andersson, TG
机构：
[1] Chalmers Univ Technol, Dept Microtechnol & Nanosci, Appl Semicond Phys MBE, S-41296 Gothenburg, Sweden
[2] Univ Gothenburg, S-41296 Gothenburg, Sweden
来源：
PHYSICAL REVIEW B | 2003年 / 67卷 / 23期
关键词：
D O I：
10.1103/PhysRevB.67.235208
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A detailed numerical description of the free-electron concentration and mobility due to charged dislocation lines is presented. The scattering at dislocations is numerically analyzed in addition to the other scattering mechanisms and the transverse mobility is calculated by the energy averaging technique. Furthermore, the effect on mobility from an unintentional bulk acceptor concentration is calculated at room temperature. Specifically the calculated mobility is presented as a function of the combined effect from free electrons (10(15)-10(19) cm(-3)), dislocations (5x10(8)-10(12) cm(-2)), and bulk acceptors (10(15)-10(19) cm(-3)). Also compensation from 0 to 100% is considered. Results are compared with experimental mobility data. Most mobility results in epitaxially grown GaN layers intended for optical and electronic device structures are limited by similar to10(10) cm(-2) dislocations and a compensation which is typically 30%-60%.
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页数：7
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