Direct measurement and analysis of the conduction band density of states in diluted GaAs1-xNx alloys

被引：36

作者：

Ivanova, L. ^{[1
]}

Eisele, H. ^{[1
]}

Vaughan, M. P. ^{[2
]}

Ebert, Ph. ^{[3
]}

Lenz, A. ^{[1
]}

Timm, R. ^{[1
]}

Schumann, O. ^{[4
,5
]}

Geelhaar, L. ^{[4
,6
]}

Daehne, M. ^{[1
]}

Fahy, S. ^{[2
,7
]}

Riechert, H. ^{[4
,6
]}

O'Reilly, E. P. ^{[2
]}

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

[2] Tyndall Natl Inst, Cork, Ireland

[3] Forschungszentrum Julich GmbH, Inst Festkorperphys, D-52425 Julich, Germany

[4] Infineon Technol AG, D-81730 Munich, Germany

[5] Carl Zeiss SMT AG, D-73447 Oberkochen, Germany

[6] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

[7] Natl Univ Ireland Univ Coll Cork, Dept Phys, Cork, Ireland

来源：

PHYSICAL REVIEW B | 2010年 / 82卷 / 16期

基金：

爱尔兰科学基金会;

关键词：

SCANNING-TUNNELING-MICROSCOPY; ELECTRONIC-PROPERTIES; NITROGEN-ATOMS; GAASN; SEMICONDUCTORS; SPECTROSCOPY; SURFACE;

D O I：

10.1103/PhysRevB.82.161201

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We use scanning tunneling spectroscopy to show directly that the conduction band density of states (DOS) of GaAs1-xNx with low nitrogen (N) content x is enhanced about 0.5 eV above the band edge, followed by a decrease at higher energy. The structure of the measured DOS is in excellent agreement with calculations based on a Green's-function formalism taking into account different N environments. This analysis highlights the inclusion of N-N pairs and the validity of the Green's-function approach to describe the band structure of dilute nitride and related extreme semiconductor alloys.

引用

页数：4

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