A statistical parameter study of indium tin oxide thin films deposited by radio-frequency sputtering

被引：65
作者：
Jun, SI [1 ]
McKnight, TE
Simpson, ML
Rack, PD
机构：
[1] Univ Tennessee, Dept Mat Sci & Engn, Knoxville, TN 37996 USA
[2] Oak Ridge Natl Lab, Mol Scale Engn & Nanoscale Technol Res Grp, Oak Ridge, TN 37831 USA
来源：
THIN SOLID FILMS | 2005年 / 476卷 / 01期
关键词：
indium tin oxide (ITO); sputtering; Taguchi design; transparent electrode;
D O I：
10.1016/j.tsf.2004.09.011
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In order to optimize the electrical and optical properties of indium tin oxide (ITO) thin films, a statistical analysis called Taguchi design was employed. It is shown that the sheet resistance and transmittance are inversely proportional to each other as a function of the process parameters. Additionally, the preferred orientation of crystalline ITO film is distinguishably changed with the increase of sputtering temperature and oxygen fraction (O-2/O-2+Ar) in the sputtering ambient. The change in crystallinity results from the content of incorporated oxygen, which significantly affects the electrical and optical properties of ITO films and causes a rearrangement of atoms to form preferred closed-packed plane orientation. Finally, the microstructure of the ITO films becomes denser with the increasing oxygen fraction. As a result of this work, we have successfully achieved low sheet resistance (7.0 Omega/square) and high transmittance (similar to 90%) for 300 nm thick films. (c) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：59 / 64
页数：6
相关论文
共 11 条
  • [1] Influence of the process parameters on structural and electrical properties of r.f. magnetron sputtering ITO films
    Baía, I
    Fernandes, B
    Nunes, P
    Quintela, M
    Martins, R
    [J]. THIN SOLID FILMS, 2001, 383 (1-2) : 244 - 247
  • [2] Light-addressed sub-μm electrodes for extracellular recording and stimulation of excitable cells
    Bucher, V
    Schubert, M
    Kern, D
    Nisch, W
    [J]. MICROELECTRONIC ENGINEERING, 2001, 57-8 : 705 - 712
  • [3] Electrical properties of a light-addressable microelectrode chip with high electrode density for extracellular stimulation and recording of excitable cells
    Bucher, V
    Brunner, B
    Leibrock, C
    Schubert, M
    Nisch, W
    [J]. BIOSENSORS & BIOELECTRONICS, 2001, 16 (03) : 205 - 210
  • [4] EFFECTS OF OXYGEN PARTIAL-PRESSURE ON THE MICROSTRUCTURE AND ELECTRICAL-PROPERTIES OF INDIUM TIN OXIDE FILM PREPARED BY DC MAGNETRON SPUTTERING
    CHOI, CG
    NO, K
    LEE, WJ
    KIM, HG
    JUNG, SO
    LEE, WJ
    KIM, WS
    KIM, SJ
    YOON, C
    [J]. THIN SOLID FILMS, 1995, 258 (1-2) : 274 - 278
  • [5] TFT-LCD technology
    Katayama, M
    [J]. THIN SOLID FILMS, 1999, 341 (1-2) : 140 - 147
  • [6] Effect of substrate temperature on the bonded states of indium tin oxide thin films deposited by plasma enhanced chemical vapor deposition
    Kim, YS
    Park, YC
    Ansari, SG
    Lee, BS
    Shin, HS
    [J]. THIN SOLID FILMS, 2003, 426 (1-2) : 124 - 131
  • [7] Round pinholes in indium-tin-oxide thin films on the glass substrates: a Taguchi method analysis and theoretical approach to their origins
    Lee, HC
    Park, OO
    [J]. VACUUM, 2004, 72 (04) : 411 - 418
  • [8] Ross P.J., 1996, TAGUCHI TECHNIQUES Q
  • [9] Roy R.K., 2001, DESIGN EXPT USING TA
  • [10] Amorphous ITO thin films prepared by DC sputtering for electrochromic applications
    Teixeira, V
    Cui, HN
    Meng, LJ
    Fortunato, E
    Martins, R
    [J]. THIN SOLID FILMS, 2002, 420 : 70 - 75
12