Preparation and Properties of TiO2/Al2O3 Stacked High k Gate Dielectric Films

被引：0

作者：

Ling Huiqin ^{[1
]}

Ding Dongyan ^{[1
]}

Zhou Xiaoqiang ^{[1
]}

Li Ming ^{[1
]}

Mao Dali ^{[1
]}

机构：

[1] Shanghai Jiao Tong Univ, Sch Mat Sci & Engn, State Key Lab Met Matrix Composites, Shanghai 200030, Peoples R China

来源：

RARE METAL MATERIALS AND ENGINEERING | 2008年 / 37卷

关键词：

TiO2/Al2O3; stack; high k; interface;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

TiO2/Al2O3 stacked high k dielectric films were deposited by RF-magneton sputtering. The effect of post-anneal on the morphology, equivalent oxide thickness, fixed charge density and the interfacial diffusion of the films were studied by atomic force microscopy, X ray diffraction, precise impedance analyzer, picoammeter and Auger electron spectroscopy. The TiO2 film crystallized upon annealing above 400 degrees C. The post-annealing improved the surface roughness, decreased the leakage current and the fixed charge density of the stacked films. Moreover, the post-annealing enhanced the diffusion of Ti to Al2O3 layer. The very thin Al2O3 layer could not block Ti from diffusion through the Al2O3 layer to the substrate.

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页码：326 / 329

页数：4

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