Full-Scale Self-Emissive Blue and Green Microdisplays Based on GaN Micro-LED Arrays

被引：28

作者：

Day, J. ^{[1
]}

Li, J. ^{[2
]}

Lie, D. Y. C. ^{[1
]}

Bradford, C. ^{[3
]}

Lin, J. Y. ^{[1
]}

Jiang, H. X. ^{[1
]}

机构：

[1] Texas Tech Univ, Dept Elect & Comp Engn, Lubbock, TX 79409 USA

[2] III N Technol Inc, Lubbock, TX 79416 USA

[3] US Army, RDECOM CERDEC Night Vis & Elect Sensors Directora, Ft Belvoir, VA 22060 USA

来源：

QUANTUM SENSING AND NANOPHOTONIC DEVICES IX | 2012年 / 8268卷

关键词：

Solid-state microdisplays; self-emissive displays; micro-LED array; III-nitride wide bandgap semiconductors; III-V and CMOS integration; active drive; flip-chip bonding; LIGHT-EMITTING-DIODES; DEVICES;

D O I：

10.1117/12.914061

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Micro-size light emitting diode (mu LED) arrays based on III-nitride semiconductors have emerged as a promising technology for a wide range of applications. If InGaN mu LED arrays can be integrated on to Si complementary metal-oxide-semiconductor (CMOS) substrates for active driving, these devices could play crucial roles in ultra-portable products such as next generation pico-projectors, as well as in emerging fields such as biophotonics and optogenetics. Here we present a demonstration of, and methods for, creating a high-resolution solid-state self-emissive microdisplay based on InGaN/GaN semiconductors. An energy efficient active drive scheme is accomplished by integrating micro-emitter arrays with CMOS active matrix drivers that are flip-chip bonded together via indium metal bumps.

引用

页数：8