InAlAs/InGaAs metamorphic high electron mobility transistors on GaAs substrate: Influence of indium content on material properties and device performance

被引：32
作者：
Cordier, Y
Bollaert, S
Zaknoune, M
Dipersio, J
Ferre, D
机构：
[1] Univ Sci & Technol Lille, Inst Elect & Microelet Nord, CNRS, UMR 9929, F-59652 Villeneuve Dascq, France
[2] Univ Sci & Technol Lille, LSPES, URA 234, Lille, France
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1999年 / 38卷 / 2B期
关键词：
molecular beam epitaxy; InAlAs/InGaAs on GaAs; lattice mismatch; high electron mobility transistor; Hall effect; atomic force microscopy; Schottky contacts; DC and AC characteristics;
D O I：
10.1143/JJAP.38.1164
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The development of lattice mismatched InAlAs/InGaAs high electron mobility transistors on high-quality GaAs substrates (metamorphic HEMT) is of primary interest for millimeter-wave devices. These heterostructures grown on lattice mismatched substrates allow an extension of the composition range in the structures and to exploit enhanced properties, provided that the crystalline perfection of the layers as well as electrical quality are preserved. The aim of this work is to study the influence of indium mole fraction on material properties as well as its consequences on device performance.
引用
收藏
页码：1164 / 1168
页数：5
相关论文
共 25 条
  • [1] High breakdown voltage InAlAs/InGaAs high electron mobility transistors on GaAs with wide recess structure
    Higuchi, K
    Matsumoto, H
    Mishima, T
    Nakamura, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (2B): : 1178 - 1181
  • [2] Effects of AlGaAsSb electron supply layer for InGaAs/InAlAs metamorphic HEMTs on GaAs substrate
    Geka, Hirotaka
    Yamada, Satoshi
    Toita, Masato
    Nagase, Kazuhiro
    Kuze, Naohiro
    JOURNAL OF CRYSTAL GROWTH, 2011, 323 (01) : 522 - 524
  • [3] Optimization of growth temperatures for InAlAs metamorphic buffers and high indium InGaAs on InP substrate
    Zhang Jian
    Chen Xing-You
    Gu Yi
    Gong Qian
    Huang Wei-Guo
    Du Ben
    Huang Hua
    Ma Ying-Jie
    Zhang Yong-Gang
    JOURNAL OF INFRARED AND MILLIMETER WAVES, 2018, 37 (06) : 699 - +
  • [4] High performance 50 nm InAlAs/In0.75 GaAs metamorphic high electron mobility transistors with Si3N4 passivation on thin InGaAs layer
    Yeon, Seongjin
    Seo, Kwangseok
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (04) : 2868 - 2871
  • [5] Characterization of high indium content metamorphic InGaAs/InAlAs modulation-doped heterostructures
    Gozu, S
    Kita, T
    Sato, Y
    Yamada, S
    Tomizawa, M
    JOURNAL OF CRYSTAL GROWTH, 2001, 227 : 155 - 160
  • [6] Subband electron properties of InGaAs/InAlAs high-electron-mobility transistors with different channel chickness
    Gao Hong-Ling
    Li Dong-Lin
    Zhou Wen-Zheng
    Shang Li-Yan
    Wang Bao-Qiang
    Zhu Zhan-Ping
    Zeng Yi-Ping
    ACTA PHYSICA SINICA, 2007, 56 (08) : 4955 - 4959
  • [7] Optimization of InAlAs buffers for growth of GaAs-based high indium content InGaAs photodetectors
    Chen, X. Y.
    Gu, Y.
    Zhang, Y. G.
    Xi, S. P.
    Guo, Z. X.
    Zhou, L.
    Li, A. Z.
    Li, Hsby.
    JOURNAL OF CRYSTAL GROWTH, 2015, 425 : 346 - 350
  • [8] InAlAs/InGaAs/InP High-Electron-Mobility Transistors with a Composite Channel and Higher Breakdown Characteristics
    Maleev, N. A.
    Vasil'ev, A. P.
    Kuzmenkov, A. G.
    Bobrov, M. A.
    Kulagina, M. M.
    Troshkov, S. I.
    Maleev, S. N.
    Belyakov, V. A.
    Petryakova, E. V.
    Kudryashova, Yu. P.
    Fefelova, E. L.
    Makartsev, I. V.
    Blokhin, S. A.
    Ahmedov, F. A.
    Egorov, A. V.
    Fefelov, A. G.
    Ustinov, V. M.
    TECHNICAL PHYSICS LETTERS, 2019, 45 (11) : 1092 - 1096
  • [9] InAlAs/InGaAs/InP High-Electron-Mobility Transistors with a Composite Channel and Higher Breakdown Characteristics
    N. A. Maleev
    A. P. Vasil’ev
    A. G. Kuzmenkov
    M. A. Bobrov
    M. M. Kulagina
    S. I. Troshkov
    S. N. Maleev
    V. A. Belyakov
    E. V. Petryakova
    Yu. P. Kudryashova
    E. L. Fefelova
    I. V. Makartsev
    S. A. Blokhin
    F. A. Ahmedov
    A. V. Egorov
    A. G. Fefelov
    V. M. Ustinov
    Technical Physics Letters, 2019, 45 : 1092 - 1096
  • [10] HIGH-PERFORMANCE IN0.3GA0.7AS/IN0.29AL0.71AS/GAAS METAMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR
    WIN, P
    DRUELLE, Y
    CORDIER, Y
    ADAM, D
    FAVRE, J
    CAPPY, A
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (6A): : 3343 - 3347
123