Structure and optical spectrum of GaN nanorods produced on Si(111) substrates

被引：2

作者：

Zhuang, Hui-Zhao ^{[1
]}

Li, Bao-Li ^{[1
]}

Xue, Cheng-Shan ^{[1
]}

Zhang, Shi-Ying ^{[1
]}

Wang, De-Xiao ^{[1
]}

Shen, Jia-Bin ^{[1
]}

机构：

[1] Shandong Normal Univ, Coll Phys & Elect, Inst Semicond, Jinan 250014, Peoples R China

来源：

VACUUM | 2008年 / 82卷 / 11期

关键词：

catalysts; nanomaterials; Nb;

D O I：

10.1016/j.vacuum.2008.01.046

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A novel method is applied to prepare nanorods. In this method, nanorods have been successfully synthesized on Si(111) substrates through annealing sputtered Ga2O3/Nb films under flowing ammonia at 950 degrees C in a quartz tube. The as-synthesized nanorods are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), and photoluminescence (PL) spectra. The results show that the nanorod is single-crystalline GaN. It has a diameter of about 200 nm and lengths typically up to several micrometers. Photoluminescence spectrum under excitation at 325 nm only exhibits a UV light emission peak is located at about 368.5 nm. Finally, the growth mechanism of nanorods is also briefly discussed. (C) 2008 Elsevier Ltd. All rights reserved.

引用

页码：1224 / 1228

页数：5

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