Structure and optical spectrum of GaN nanorods produced on Si(111) substrates

被引:2
作者
Zhuang, Hui-Zhao [1 ]
Li, Bao-Li [1 ]
Xue, Cheng-Shan [1 ]
Zhang, Shi-Ying [1 ]
Wang, De-Xiao [1 ]
Shen, Jia-Bin [1 ]
机构
[1] Shandong Normal Univ, Coll Phys & Elect, Inst Semicond, Jinan 250014, Peoples R China
关键词
catalysts; nanomaterials; Nb;
D O I
10.1016/j.vacuum.2008.01.046
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A novel method is applied to prepare nanorods. In this method, nanorods have been successfully synthesized on Si(111) substrates through annealing sputtered Ga2O3/Nb films under flowing ammonia at 950 degrees C in a quartz tube. The as-synthesized nanorods are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), and photoluminescence (PL) spectra. The results show that the nanorod is single-crystalline GaN. It has a diameter of about 200 nm and lengths typically up to several micrometers. Photoluminescence spectrum under excitation at 325 nm only exhibits a UV light emission peak is located at about 368.5 nm. Finally, the growth mechanism of nanorods is also briefly discussed. (C) 2008 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1224 / 1228
页数:5
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