Highly Integrated InGaN/GaN Semipolar Micro-Pyramid Light-Emitting Diode Arrays by Confined Selective Area Growth

被引：17

作者：

Bae, Si-Young ^{[1
]}

Kim, Do-Hyung ^{[1
]}

Lee, Dong-Seon ^{[1
]}

Lee, Seung-Jae ^{[2
]}

Baek, Jong Hyeob ^{[2
]}

机构：

[1] Gwangju Inst Sci & Technol, Sch Informat & Commun, Kwangju 500712, South Korea

[2] Korea Photon Technol Inst, Kwangju 500779, South Korea

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2012年 / 15卷 / 02期

关键词：

EPITAXIAL LATERAL OVERGROWTH; WELL STRUCTURES; GAN STRUCTURES; QUANTUM-WELLS; FABRICATION; STRAIN; SEMICONDUCTORS; LUMINESCENCE; EMISSION; SINGLE;

D O I：

10.1149/2.018202esl

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We report on the fabrication of highly integrated semipolar {10 (1) over bar1} GaN micro-pyramid light-emitting diode (LED) arrays on a c-plane sapphire substrate obtained via confined selective area growth (SAG). The cathodoluminescence (CL) revealed that the micro-pyramid arrays were under a severe local strain and potential fluctuations were observed depending on the location of the pyramid facets. The emissive region in the micro-pyramid facets was also found to be different in the monochromatically captured CL images. Furthermore, the electroluminescence (EL) of the micro-pyramid LED arrays had a palpable emissive spectra for high indium composition compared to c-plane LEDs, and optical polarization switching was also observed. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.018202esl] All rights reserved.

引用

页码：H47 / H50

页数：4

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