Effect of Rotational Misalignment on Interlayer Coupling in a Graphene/hBN/Graphene van der Waal's heterostructure

被引：0

作者：

Valsaraj, Amithraj ^{[1
]}

Banerjee, Sanjay K.

机构：

[1] Univ Texas Austin, Microelect Res Ctr, Austin, TX 78758 USA

来源：

2016 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD) | 2016年

关键词：

graphene; tunneling current; commensurate rotation; ITFET; interlayer coupling; heterostructures; GRAPHENE;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We simulate the effects of rotational misalignment of the tunnel barrier layer between aligned channel layers in a monolayer-graphene/hBN/monolayer-graphene system. Through use of density functional theory (DFT) methods, we demonstrate a reduction in tunneling current due to weakened coupling across the rotationally misaligned interfaces between the channel layers and the tunnel barrier.

引用

页码：365 / 367

页数：3

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