From Monolayer to Multilayer N-Channel Polymeric Field-Effect Transistors with Precise Conformational Order

被引：115
作者：
Fabiano, Simone [2 ]
Musumeci, Chiara [3 ]
Chen, Zhihua [1 ]
Scandurra, Antonino [3 ]
Wang, He [4 ]
Loo, Yueh-Lin [4 ]
Facchetti, Antonio [1 ]
Pignataro, Bruno [2 ]
机构：
[1] Polyera Corp, Skokie, IL 60077 USA
[2] Univ Palermo, Dipartimento Chim S Cannizzaro, I-90128 Palermo, Italy
[3] Superlab Consorzio Catania Ric, I-95121 Catania, Italy
[4] Princeton Univ, Dept Chem & Biol Engn, Princeton, NJ 08544 USA
来源：
ADVANCED MATERIALS | 2012年 / 24卷 / 07期
关键词：
monolayer field-effect transistor; semiconducting polymers; layered materials; charge transport; THIN-FILMS; CHARGE-TRANSPORT; MOBILITY; POLYTHIOPHENE; TEMPERATURE; INTERFACES; TEXTURE; GROWTH;
D O I：
10.1002/adma.201103800
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Monolayer field-effect transistors based on a high-mobility n-type polymer are demonstrated. The accurate control of the long-range order by Langmuir-Schafer (LS) deposition yields dense polymer packing exhibiting good injection properties, relevant current on/off ratio and carrier mobility in a staggered configuration. Layer-by-layer LS film transistors of increasing thickness are fabricated and their performance compared to those of spin-coated films.
引用
收藏
页码：951 / +
页数：7
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