Wall profile of thick photoresist generated via contact printing

被引：32

作者：

Cheng, Y ^{[1
]}

Lin, CY

Wei, DH

Loechel, B

Gruetzner, G

机构：

[1] Synchrotron Radiat Res Ctr, Hsinchu 30077, Taiwan

[2] Frauenhofer Inst Silicon Technol, D-14199 Berlin, Germany

[3] Micro Resist Technol GMBH, D-12555 Berlin, Germany

来源：

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS | 1999年 / 8卷 / 01期

关键词：

contact printing; LIGA; MEMS; micromachining; near-held lithography; photoresist; proximity printing; side-wall; thick film;

D O I：

10.1109/84.749398

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-aspect-ratio patterns generated by direct contact or proximity: printing in LIGA and other similar processes have recently gained great interest in the field of MEMS. One key issue for a successful thick-film lithography is the control of walt profile, This paper deals with this issue based on an approximation including the effects of Fresnel diffraction and exposure kinetics for various types of photoresist. This approach leads to simple while practical formulas for estimating the wall profile and resolution for the near-field lithography of thick photoresist. [313].

引用

页码：18 / 26

页数：9

共 18 条

[1]

Becker E. W., 1986, Microelectronic Engineering, V4, P35, DOI 10.1016/0167-9317(86)90004-3

[2]

BORN M, 1980, PRINCIPLES OPTICS, pCH8

[3]

BOWDEN MJ, 1994, LITHOGRAPY PROCESS P, pCH2

[4] Dose distribution of synchrotron x-ray penetrating materials of low atomic numbers [J].