Flexible Diodes with Low Breakdown Voltage for Steep Slope Transistors and One Diode-One Resistor Applications

被引：10

作者：

Aziz, Jamal ^{[1
,2
]}

Kim, Honggyun ^{[1
,2
]}

Rehman, Shania ^{[1
]}

Khan, Muhammad Farooq ^{[1
]}

Kadam, Kalyani D. ^{[1
,2
]}

Patil, Harshada ^{[1
,2
]}

Aftab, Sikandar ^{[3
]}

Dastgeer, Ghulam ^{[4
,5
]}

Kim, Deok-kee ^{[1
,2
]}

机构：

[1] Sejong Univ, Dept Elect Engn, 209 Neungdong Ro, Seoul 05006, South Korea

[2] Sejong Univ, Dept Convergence Engn Intelligent Drone, Seoul 05006, South Korea

[3] Simon Fraser Univ, Dept Engn, Burnaby, BC, Canada

[4] Sejong Univ, Texas Photon Ctr Int Res Ctr GRI TPC IRC, Dept Phys & Astron, Seoul 05006, South Korea

[5] Sejong Univ, Texas Photon Ctr Int Res Ctr GRI TPC IRC, Graphene Res Inst, Seoul 05006, South Korea

来源：

ADVANCED ELECTRONIC MATERIALS | 2022年 / 8卷 / 04期

基金：

新加坡国家研究基金会;

关键词：

electrical breakdown; flexible diodes; heterostructure; rectification; Schottky barrier; zinc oxide; ELECTRICAL BREAKDOWN; SCHOTTKY CONTACTS; SWITCHING MEMORY; TRANSPARENT; OXIDE; ZNO; FABRICATION; LAYER;

D O I：

10.1002/aelm.202100961

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Transparent and flexible diodes could be useful for future transparent electronics. Here such diodes are discussed with electrical breakdown (EBR) comprises of W/ZnO/ITO structure on the polyethylene terephthalate substrates. The three-layered structure shows rectifying characteristics with low breakdown voltage originated from the Schottky barrier at the W/ZnO (0.8 eV) and the ZnO/ITO (0.1 eV) interfaces. Mechanical endurance is retained after different bending strengths and the rectification ratio is showed stability for 10(4) cycles without any significant degradation. Steep slope transistors are designed by implementing such diodes in series with the conventional field effect transistors. Such diode plus transistor stack enables field effect transistors with steep subthreshold swing of < 5.2 mV dec(-1) and an internal current amplification due to negative differential resistance induces across the Schottky diodes during the EBR. Also, one diode-one resistor structure is successfully demonstrated by connecting the flexible diodes and resistive memory in series for applications in high density integrated non-volatile memory applications.

引用

页数：6

共 49 条

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