Growth and characterization of Ge nanocrystals

被引：27
|
作者：
Guha, S [1 ]
Wall, M
Chase, LL
机构：
[1] USN, Res Lab, Div Condensed Matter & Radiat Sci, Washington, DC 20375 USA
[2] Univ Calif Lawrence Livermore Natl Lab, Div Mat & Chem Sci, Livermore, CA 94550 USA
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1999年 / 147卷 / 1-4期
关键词：
Ge nanocrystals; Raman spectroscopy; X-ray; TEM;
D O I：
10.1016/S0168-583X(98)00578-3
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
We have synthesized Ge nanocrystals of mean sizes 4, 8, and 12 nm by ion-implanting Ge+ ions into thermally grown SiO2 films and subsequent annealing of the films at 830 degrees C for 30 min in nitrogen. These films were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), and Raman spectroscopy. A distribution of particle size was identified by TEM in a 100 nm band below the surface. Particle sizes were estimated by these three techniques. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：367 / 372
页数：6
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