Growth and characterization of Ge nanocrystals

被引：27

作者：

Guha, S ^{[1
]}

Wall, M

Chase, LL

机构：

[1] USN, Res Lab, Div Condensed Matter & Radiat Sci, Washington, DC 20375 USA

[2] Univ Calif Lawrence Livermore Natl Lab, Div Mat & Chem Sci, Livermore, CA 94550 USA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1999年 / 147卷 / 1-4期

关键词：

Ge nanocrystals; Raman spectroscopy; X-ray; TEM;

D O I：

10.1016/S0168-583X(98)00578-3

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We have synthesized Ge nanocrystals of mean sizes 4, 8, and 12 nm by ion-implanting Ge+ ions into thermally grown SiO2 films and subsequent annealing of the films at 830 degrees C for 30 min in nitrogen. These films were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), and Raman spectroscopy. A distribution of particle size was identified by TEM in a 100 nm band below the surface. Particle sizes were estimated by these three techniques. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：367 / 372

页数：6

共 11 条

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