Construction of Active Orbital via Single-Atom Cobalt Anchoring on the Surface of 1T-MoS2 Basal Plane toward Efficient Hydrogen Evolution

被引:53
作者
Qiao, Wen [1 ]
Xu, Wei [2 ,3 ]
Xu, Xiaoyong [4 ]
Wu, Liqian [1 ]
Yan, Shiming [1 ]
Wang, Dunhui [1 ]
机构
[1] Hangzhou Dianzi Univ, Sch Elect & Informat, Hangzhou 310018, Peoples R China
[2] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
[3] Nanjing Univ, Key Lab Nanomat Jiang Su Prov, Nanjing 210093, Peoples R China
[4] Yangzhou Univ, Sch Phys Sci & Technol, Yangzhou 225002, Jiangsu, Peoples R China
来源
ACS APPLIED ENERGY MATERIALS | 2020年 / 3卷 / 03期
基金
中国国家自然科学基金;
关键词
hydrogen evolution reaction; electrocatalysts; active orbital; molybdenum disulfide; single-atom catalysts; CATALYTIC-ACTIVITY; EDGE SITES; MONOLAYER MOS2; QUANTUM DOTS; TRANSITION; NANOSHEETS; METAL; MECHANISM; H-2;
D O I
10.1021/acsaem.0c00163
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Endowing the basal plane of metallic MoS2 with highly active catalytic sites is one strategy to promote its hydrogen evolution reaction (HER) catalytic performance. Since there is unsuitable orbital orientation at the Fermi energy level, the activity of HER for the perfect basal plane in metallic 1T phase MoS2 (1T-MoS2) is insufficient. Herein, we resolved this issue through a single-atom cobalt-introduced active orbital. The prepared cobalt (Co)-doped 1T-MoS2 displays a significantly enhanced HER activity. The overpotential at 10 mA cm(-2) is 84 mV. The Tafel slope is 47 mV dec(-1). The results of experiment and theory reveal that the doped Co atoms anchor preferentially on the Mo top sites, acting as active sites and possessing a Gibbs free energy near zero for hydrogen adsorption. Theoretical calculation further reveals that the high activity of Co anchoring on the surface is attributed to the introduction of a d(z)(2) orbital perpendicular to the basal plane around the Fermi level, enabling energetically and sterically favorable hydrogen adsorption/desorption.
引用
收藏
页码:2315 / 2322
页数:8
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