Properties of bulk scandium nitride crystals grown by physical vapor transport

被引：12

作者：

Al-Atabi, Hayder ^{[1
,2
]}

Zheng, Qiye ^{[3
]}

Cetnar, John S. ^{[4
]}

Look, David ^{[4
,5
]}

Cahill, David G. ^{[3
]}

Edgar, James H. ^{[1
]}

机构：

[1] Kansas State Univ, Tim Taylor Dept Chem Engn, Manhattan, KS 66506 USA

[2] Univ Technol Baghdad, Chem Engn Dept, POB 35010, Baghdad, Iraq

[3] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA

[4] Air Force Res Lab, Sensors Directorate, Wright Patterson AFB, OH 45433 USA

[5] Wright State Univ, Semicond Res Ctr, Dayton, OH 45435 USA

来源：

APPLIED PHYSICS LETTERS | 2020年 / 116卷 / 13期

基金：

美国国家科学基金会;

关键词：

THERMAL-CONDUCTIVITY;

D O I：

10.1063/1.5141808

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this study, the growth of scandium nitride (100) single crystals with high electron mobility and high thermal conductivity was demonstrated by physical vapor transport (PVT). Single crystals were grown in the temperature range of 1900 degrees C-2140 degrees C under a nitrogen pressure between 15 and 20Torr. Single crystal tungsten (100) was used as a nearly lattice constant matched seed crystal. Growth for 20days resulted in a 2mm thick crystal. Hall-effect measurements revealed that the layers were n-type with a 300K electron concentration and a mobility of 2.17 x 10(21) cm(-3) and 73cm(2)/Vs, respectively. Consequently, this ScN crystal had a low electrical resistivity, 3.94 x 10(-5) Omega cm. The thermal conductivity was in the range of 51-56W/mK, three times higher than those in previous reports for ScN thin films. This study demonstrates the viability of the PVT crystal growth method for producing high quality bulk scandium nitride single crystals.

引用

页数：4

共 45 条

[11] Molecular beam epitaxial growth of scandium nitride on hexagonal SiC, GaN, and AlN [J].