Cation distribution and structural instability in Pr-doped Bi4Ti3O12

被引：2

作者：

Mei, X. A. ^{[1
]}

Chen, M. ^{[1
]}

An, W. K. ^{[1
]}

Huang, C. Q. ^{[1
]}

Liu, J. ^{[1
]}

Cai, A. H. ^{[1
]}

机构：

[1] Hunan Inst Sci & Technol, Dept Phys, Yueyang 414000, Peoples R China

来源：

HIGH-PERFORMANCE CERAMICS V, PTS 1 AND 2 | 2008年 / 368-372卷

关键词：

ferroelectric; dielectric;

D O I：

10.4028/www.scientific.net/KEM.368-372.85

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Pr-doped bismuth titanate (BixPryTi3O12: BPT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique, and the structures and Raman spectra of the films were investigated. XRD studies indicated that all of the BPT films consist of single phase of a bismuth-layered structure, showing a highly (117) oriented preferential growth with a minor fraction of (001) orientation. For an increasing degree of Pr doping, Raman spectra studies revealed a substantial hardening of the vibration involving Bi atoms at the perovskite A site, whereas the Bi mode at the Bi2O2 layer is negligibly changed. From a comparison with a simple mass consideration, we identify a precise cation distribution, indicating a pronounced site selectivity of Pr ions for the A site for y similar to 1.2.

引用

页码：85 / 87

页数：3

共 7 条

[1] Ferroelectric properties of Pr6O1 1-doped Bi4Ti3O12 [J].

Chen, M ;

Liu, ZL ;

Wang, Y ;

Wang, CC ;

Yang, XS ;

Yao, KL .

SOLID STATE COMMUNICATIONS, 2004, 130 (11) :735-739

[2] SWITCHING, FATIGUE, AND RETENTION IN FERROELECTRIC BI4TI3O12 THIN-FILMS [J].

JOSHI, PC ;

KRUPANIDHI, SB .

APPLIED PHYSICS LETTERS, 1993, 62 (16) :1928-1930

[3] Large remanent polarization of (Bi,Nd)4Ti3O12 epitaxial thin films grown by metalorganic chemical vapor deposition [J].

Kojima, T ;

Sakai, T ;

Watanabe, T ;

Funakubo, H ;

Saito, K ;

Osada, M .

APPLIED PHYSICS LETTERS, 2002, 80 (15) :2746-2748

[4] Lanthanum-substituted bismuth titanate for use in non-volatile memories [J].

Park, BH ;

Kang, BS ;

Bu, SD ;

Noh, TW ;

Lee, J ;

Jo, W .

NATURE, 1999, 401 (6754) :682-684

[5] Crystal and electronic structures of Bi4-xLaxTi3O12 ferroelectric materials [J].

Shimakawa, Y ;

Kubo, Y ;

Tauchi, Y ;

Asano, H ;

Kamiyama, T ;

Izumi, F ;

Hiroi, Z .

APPLIED PHYSICS LETTERS, 2001, 79 (17) :2791-2793

[6] Approach for enhanced polarization of polycrystalline bismuth titanate films by Nd3+/V5+ cosubstitution [J].

Uchida, H ;

Yoshikawa, H ;

Okada, I ;

Matsuda, H ;

Iijima, T ;

Watanabe, T ;

Kojima, T ;

Funakubo, H .

APPLIED PHYSICS LETTERS, 2002, 81 (12) :2229-2231

[7] Ferroelectric properties of La and Zr substituted Bi4Ti3O12 thin films [J].

Zhang, ST ;

Chen, YF ;

Wang, J ;

Cheng, GX ;

Liu, ZG ;

Ming, NB .

APPLIED PHYSICS LETTERS, 2004, 84 (18) :3660-3662

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