A New Foundry-Based Open-Gate Junction Field-Effect Transistor (OG-JFET) as Electronic Sensing Platform (ESP) for Life Science Applications

被引：3

作者：

Panahi, Abbas ^{[1
]}

Tabrizi, Hamed Osouli ^{[1
]}

Mangannavar, Priyadarshini ^{[2
]}

Chebotarev, Oleg ^{[2
]}

Fung, Andrew ^{[2
]}

Ghafar-Zadeh, Ebrahim ^{[1
]}

机构：

[1] York Univ, Lassonde Sch Engn, Dept Elect Engn & Comp Sci, Biol Inspired Sensors & Actuators BioSA, Toronto, ON, Canada

[2] CMC Microsyst, Montreal, PQ, Canada

来源：

2021 IEEE SENSORS | 2021年

关键词：

Field-effect transistor (FET); biosensor; ISFET; MEMS; COMSOL; Junction Field-effect Transistor (JFET); BioFET;

D O I：

10.1109/SENSORS47087.2021.9639830

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An electronic sensor platform based on ionsensitive open-gate junction field-effect-transistors (OG-JFET) is introduced for life science applications. OG-JFET is fabricated by an established and mass-producible method. A thin layer (1.6 mu m) of p-type silicon is epitaxially grown on thick (450 mu m) n-type silicon to create a vertical p-n junction. The ptype layer serves as the main channel with two ohmic contacts as the source and drain. OG-JFET in our design showed a sensitivity of 52.12 mV/pH and 16 mV hysteresis with a 3 mu A/hour drift rate. Also, a COMSOL Multiphysics model is introduced for efficient design of OG-JFET.

引用

页数：4

共 7 条

[1] Photovoltage field-effect transistors [J].

Adinolfi, Valerio ;

Sargent, Edward H. .

NATURE, 2017, 542 (7641) :324-+

[2] Modeling of porous silicon junction field effect transistor gas sensors: Insight into NO2 interaction [J].

Barillaro, G. ;

Lazzerini, G. M. ;

Strambini, L. M. .

APPLIED PHYSICS LETTERS, 2010, 96 (16)

[3] Detection principles of biological and chemical FET sensors [J].

Kaisti, Matti .

BIOSENSORS & BIOELECTRONICS, 2017, 98 :437-448

[4] Recent Advances of Field-Effect Transistor Technology for Infectious Diseases [J].

Panahi, Abbas ;

Sadighbayan, Deniz ;

Forouhi, Saghi ;

Ghafar-Zadeh, Ebrahim .

BIOSENSORS-BASEL, 2021, 11 (04)

[5] Sub-Parts Per Million NO2 Chemi-Transistor Sensors Based on Composite Porous Silicon/Gold Nanostructures Prepared by Metal-Assisted Etching [J].

Sainato, Michela ;

Strambini, Lucanos Marsilio ;

Rella, Simona ;

Mazzotta, Elisabetta ;

Barillaro, Giuseppe .

ACS APPLIED MATERIALS & INTERFACES, 2015, 7 (13) :7136-7145

[6] Review-Field-Effect Transistor Biosensing: Devices and Clinical Applications [J].

Syu, Yu-Cheng ;

Hsu, Wei-En ;

Lin, Chih-Ting .

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2018, 7 (07) :Q3196-Q3207

[7] Recent Advances and Progress in Development of the Field Effect Transistor Biosensor: A Review [J].

Wadhera, Tanu ;

Kakkar, Deepti ;

Wadhwa, Girish ;

Raj, Balwinder .

JOURNAL OF ELECTRONIC MATERIALS, 2019, 48 (12) :7635-7646

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