An augmented small-signal HBT model with its analytical based parameter extraction technique

被引：19
作者：
Degachi, Louay [1 ]
Ghannouchi, Fadhel M. [2 ]
机构：
[1] Ecole Polytech, Dept Elect Engn, PolyGrames Res Ctr, Montreal, PQ H3C 3A7, Canada
[2] Univ Calgary, Schulich Sch Engn, Elect & Comp Engn Dept, Intelligent RF Radio Technol Lab, Calgary, AB T2N 1N4, Canada
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2008年 / 55卷 / 04期
关键词：
AC emitter current crowding; heterojunction bipolar transistor (HBT); parameter extraction; small-signal equivalent-circuit model;
D O I：
10.1109/TED.2008.917539
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a simple and systematic extraction technique for an augmented heterojunction bipolar transistor (HBT) small-signal model with improved representation for the intrinsic base and external base-collector junction. The extraction results for a 1 x 10 mu m(2) HBT allow the investigation of the validity of the usual representation of ac emitter current crowding, as a capacitance in shunt with the spreading resistance.
引用
收藏
页码：968 / 972
页数：5
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