Effect of electromagnetic fields on integrated microcircuits

被引：1

作者：

Starostenko, VV

Taran, EP

Grigor'ev, EV

Borisov, AA

机构：

来源：

MEASUREMENT TECHNIQUES | 1998年 / 41卷 / 04期

关键词：

Electromagnetic Field; Electric Field Strength; Semiconductor Device; Stability Threshold; Discharge Circuit;

D O I：

10.1007/BF02504027

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We consider the results of investigations on the effect of external electromagnetic fields on integrated microcircuits. We have determined the stability thresholds for microcircuits as a function of the electric field strength, the number of pulses to which they are exposed, and the relative orientation of the integrated microcircuit and the electromagnetic field. We have determined the reasons for local degradation of the metallization and we present data on the threshold values for degradation processes.

引用

页码：394 / 397

页数：4