Analytical approach for polar magnetooptics in multilayer spin-polarized light emitting diodes based on InAs quantum dots

Y To explain the magneto-optical (MO) data in GaAs/InAs/GaAs/MgO/Co/Au thin-film structures, we modeled the optical interactions within magnetic layered structures. Firstly, for a numerical simulation of the MO effects, a full matrix model based on Yeh's formalism is employed, and secondly for the comparison between different magnetic and nonmagnetic layer is considered different multilayer structures. We analyze the MO effects during vertical electron transport in spin-polarized light-emitting diode (spin-LEDs) devices. We observe the outside fields depend mainly on structural parameters. When we considered Co/Fe layers, we found that the intensities of emitted waves polarized along y and +45(0) directions are significantly increased during transport through the active region of the device, while for Co/Ag/Au structure these quantities have lower magnitudes and sandwich structure Au/Co/Au has the lowest values.