Correlation between magnetic homogeneity, oxygen content, and electrical and magnetic properties of perovskite manganite thin films

被引:97
作者
Rajeswari, M [1 ]
Shreekala, R
Goyal, A
Lofland, SE
Bhagat, SM
Ghosh, K
Sharma, RP
Greene, RL
Ramesh, R
Venkatesan, T
Boettcher, T
机构
[1] Univ Maryland, NSF, Mat Res Sci & Engn Ctr, College Pk, MD 20742 USA
[2] Univ Maryland, Ctr Superconduct Res, College Pk, MD 20742 USA
[3] Univ Bremen, Dept Phys, D-2800 Bremen, Germany
关键词
D O I
10.1063/1.122549
中图分类号
O59 [应用物理学];
学科分类号
摘要
Perovskite manganese oxide materials known for the phenomenon of colossal magnetoresistance often exhibit anomalously large 1/f noise and large, temperature-dependent ferromagnetic resonance (FMR) linewidths. We show that in epitaxial films, these anomalies are very sensitive to oxygen partial pressure during film growth and to postdeposition thermal processing in oxygen, suggesting that oxygen stoichiometry plays a key role. We find that the temperature coefficient of resistance (TCR) at the metal-insulator transition increases and the FMR linewidth decreases as we increase the oxygen partial pressure during growth. Postdeposition heat treatment in oxygen leads to further increase in TCR and decrease in FMR linewidth, accompanied by a dramatic reduction in 1/f noise magnitudes. (C) 1998 American Institute of Physics. [S0003-6951(98)01943-3]
引用
收藏
页码:2672 / 2674
页数:3
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