Inelastic deformation and phase transformation of shock compressed silicon single crystals

被引:36
作者
Turneaure, Stefan J. [1 ]
Gupta, Y. M. [1 ]
机构
[1] Washington State Univ, Inst Shock Physics, Dept Phys, Pullman, WA 99164 USA
关键词
D O I
10.1063/1.2814067
中图分类号
O59 [应用物理学];
学科分类号
摘要
Silicon crystals were shock compressed along the [100] and [111] orientations to stresses between 15.9 and 21.7 GPa. Transmitted wave profiles exhibited considerable orientation dependence for elastic and inelastic waves but very little orientation dependence for the phase transformation wave. Following the phase transformation wave, the silicon was compressed similar to 23%. This compression is significantly greater than the previously reported compressions for silicon shocked to similar stresses, and the present data are consistent with a completed phase transformation. The measured mechanical impedance of the transformed silicon matches the bulk impedance of the simple hexagonal phase of silicon reported in static high pressure studies. (c) 2007 American Institute of Physics.
引用
收藏
页数:3
相关论文
共 11 条
[1]   LASER INTERFEROMETER FOR MEASURING HIGH VELOCITIES OF ANY REFLECTING SURFACE [J].
BARKER, LM ;
HOLLENBACH, RE .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (11) :4669-+
[2]   REDUCTION OF SHEAR-STRENGTH AND PHASE-TRANSITION IN SHOCK-LOADED SILICON [J].
GOTO, T ;
SATO, T ;
SYONO, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (06) :L369-L371
[3]   AXIAL YIELD STRENGTHS AND 2 SUCCESSIVE PHASE TRANSITION STRESSES FOR CRYSTALLINE SILICON [J].
GUST, WH ;
ROYCE, EB .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) :1897-&
[4]   Crystal structure of the high-pressure phase silicon VI [J].
Hanfland, M ;
Schwarz, U ;
Syassen, K ;
Takemura, K .
PHYSICAL REVIEW LETTERS, 1999, 82 (06) :1197-1200
[5]   PHASES OF SILICON AT HIGH-PRESSURE [J].
HU, JZ ;
SPAIN, IL .
SOLID STATE COMMUNICATIONS, 1984, 51 (05) :263-266
[6]   PRESSURE-DEPENDENCE OF THE IMMA PHASE OF SILICON [J].
MCMAHON, MI ;
NELMES, RJ ;
WRIGHT, NG ;
ALLAN, DR .
PHYSICAL REVIEW B, 1994, 50 (02) :739-743
[7]  
McQueen R., 1970, High-Velocity Impact Phenomena, P293
[8]   ELASTIC MODULI OF SILICON VS HYDROSTATIC PRESSURE AT 25.0DEGREECS + MINUS195.8DEGREESC [J].
MCSKIMIN, HJ ;
ANDREATCH, P .
JOURNAL OF APPLIED PHYSICS, 1964, 35 (07) :2161-&
[9]   High-pressure phases of group-IV, III-V, and II-VI compounds [J].
Mujica, A ;
Rubio, A ;
Muñoz, A ;
Needs, RJ .
REVIEWS OF MODERN PHYSICS, 2003, 75 (03) :863-912
[10]   STRUCTURAL PHASE-TRANSITIONS IN SI AND GE UNDER PRESSURES UP TO 50 GPA [J].
OLIJNYK, H ;
SIKKA, SK ;
HOLZAPFEL, WB .
PHYSICS LETTERS A, 1984, 103 (03) :137-140