Low-threshold-current operation of high-mesa stripe distributed reflector laser emitting at 1540nm

被引：12
作者：
Ullah, Saeed Mahmud
Suemitsu, Ryo
Lee, SeungHun
Otake, Masato
Nishiyama, Nobuhiko
Arai, Shigehisa
机构：
[1] Tokyo Inst Technol, Quantum Nanoelect Res Ctr, Meguro Ku, Tokyo 1528552, Japan
[2] Tokyo Inst Technol, Dept Elect & Elect Engn, Meguro Ku, Tokyo 1528552, Japan
[3] Japan Sci & Technol Agcy, CREST, Kawaguchi, Saitama 3320012, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2007年 / 46卷 / 41-44期
关键词：
submilliampere operation; GaInAsP-InP; DR laser; narrow stripe; strong index coupling;
D O I：
10.1143/JJAP.46.L1068
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A sub-mA-threshold-current operation (as low as 0.8 mA) of a high-mesa. stripe geometry distributed reflector (DR) laser with a wirelike active distributed feedback (DFB) section and passive distributed Bragg reflector (DBR) section was realized under room-temperature continuous-wave conditions utilizing a narrow laser stripe (2.1 mu m) and a large index coupling coefficient of 570cm(-1).
引用
收藏
页码：L1068 / L1070
页数：3
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