Investigation on the abnormal resistive switching induced by ultraviolet light exposure based on HfOx film

被引：15

作者：

Chang, Kow-Ming ^{[2
,3
]}

Tzeng, Wen-Hsien ^{[2
,3
]}

Liu, Kou-Chen ^{[1
]}

Chan, Yi-Chun ^{[1
]}

Kuo, Chun-Chih ^{[1
]}

机构：

[1] Chang Gung Univ, Inst Electroopt Engn, Tao Yuan 33302, Taiwan

[2] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan

[3] Natl Chiao Tung Univ, Inst Elect, Hsinchu 30010, Taiwan

来源：

MICROELECTRONICS RELIABILITY | 2010年 / 50卷 / 12期

关键词：

DEVICES; VACUUM; OXIDE;

D O I：

10.1016/j.microrel.2010.05.012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Effect of ultraviolet (UV) light exposure on the resistive switching characteristics of a ITO/HfOx/TiN structure were investigated in this study. Samples exposed with and without ITO shield film exhibit distinct switching characteristics, including leakage current, I-V curves, set and reset voltage fluctuation. Based on random circuit network simulation by Liu et al., we suggest the distinction was attributed to the different filament shapes during forming process. Defects preexisted inside the HfOx film can cause large difference on the electrical properties. Therefore, the UV laser exposure is a critical issue on the electrical characteristics of RRAM devices. (C) Elsevier Ltd. All rights reserved.

引用

页码：1931 / 1934

页数：4

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