Continuous-wave 1550 nm operated terahertz system using ErAs:In(AI) GaAs photoconductors with 52 dB dynamic range at 1 THz

被引：48

作者：

Olvera, A. D. J. Fernandez ^{[1
]}

Lu, H. ^{[2
]}

Gossard, A. C. ^{[3
]}

Preu, S. ^{[1
]}

机构：

[1] Tech Univ Darmstadt, Dept Elect Engn & Informat Technol, Terahertz Syst Technol, Merckstr 25, D-64283 Darmstadt, Germany

[2] Nanjing Univ, Coll Engn & Appl Sci, Nanjing, Jiangsu, Peoples R China

[3] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

OPTICS EXPRESS | 2017年 / 25卷 / 23期

关键词：

SEMICONDUCTOR DIGITAL COMPOSITE; 1.55; MU-M; TECHNOLOGY; GENERATION; INGAAS; POWER;

D O I：

10.1364/OE.25.029492

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Telecom-wavelength compatible photoconductors benefit strongly from the large amount and affordability of telecom lasers and components but there are demanding requirements on material development. We demonstrate continuous-wave (CW) photomixing with a setup that only uses ErAs: In(Al) GaAs devices with a peak dynamic range (DNR) of 78 dB and a bandwidth of similar to 3.65 THz at an integration time of 300 ms and only 26 mW laser power on each device. The ErAs: InGaAs receiver further features a factor of two lower noise equivalent power (NEP) than a state-of-the-art photoconductor, despite an antenna mismatch. (C) 2017 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

引用

页码：29492 / 29500

页数：9

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