Diode lasers emitting near 3.44 μm in continuous-wave regime at 300K

被引：46

作者：

Hosoda, T. ^{[1
]}

Kipshidze, G. ^{[1
,2
]}

Shterengas, L. ^{[1
]}

Belenky, G. ^{[1
]}

机构：

[1] SUNY Stony Brook, Stony Brook, NY 11794 USA

[2] Power Photon Corp, Stony Brook, NY 11790 USA

来源：

ELECTRONICS LETTERS | 2010年 / 46卷 / 21期

基金：

美国国家科学基金会;

关键词：

POWER;

D O I：

10.1049/el.2010.2564

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A continuous-wave, room temperature operation of type-I quantum well diode lasers was extended above 3.4 mu m. The laser heterostructure, optimised for minimum threshold carrier concentration, was pseudomorphically grown by solid source molecular beam epitaxy on GaSb. Multimode lasers generate 29 mW of output power at 17 degrees C.

引用

收藏

页码：1455 / 1456

页数：2

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