Development of filtered DC metal plasma ion implantation and coating deposition methods based on high-frequency short-pulsed bias voltage application

An innovative concept in the development of advanced coating deposition and ion implantation method including an application of filtered DC metal plasma source and high-frequency short-pulsed negative bias voltage with a duty factor in the range 10-99% are considered. The regularities of ion implantation and metal plasma deposition for metal and dielectric samples are experimentally investigated. Experimentally, it has been shown that metal plasma-based ion implantation, high-concentration metal plasma ion implantation with compensation of ion surface sputtering by metal plasma deposition and ion-assisted coating deposition can be realized by variation of bias potential ranging from 0 V to 4 kV, with pulse repetition rate smoothly adjusted in the range (2-4.4) x 10(5) PPS and pulse duration ranging from 0.5 to 2 mu s. Special features of the material treatment method depending on plasma concentration, pulse repetition rate and duty factor have been examined. (c) 2005 Elsevier Ltd. All rights reserved.