Numerical simulation of the time-resolved surface photovoltage at Si-SiO2 interfaces

被引：0
作者：
Kirilov, K [1 ]
Germanova, K [1 ]
Donchev, V [1 ]
Ivanov, T [1 ]
机构：
[1] Univ Sofia, Fac Phys, Sofia 1164, Bulgaria
来源：
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2005年 / 7卷 / 01期
关键词：
surface photovoltage; time-resolved; numerical simulation; interface states;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We present a simple original algorithm for numerical simulation of super-bandgap SPV transients in semiconductors. It is applied to a p-Si/SiO2 interface with quasi-continuously distributed non-interacting interface states. The simulated SPV time dependence is compared with experimental results, and a reasonable agreement is found.
引用
收藏
页码：529 / 532
页数：4
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