Numerical simulation of the time-resolved surface photovoltage at Si-SiO2 interfaces

被引：0

作者：

Kirilov, K ^{[1
]}

Germanova, K ^{[1
]}

Donchev, V ^{[1
]}

Ivanov, T ^{[1
]}

机构：

[1] Univ Sofia, Fac Phys, Sofia 1164, Bulgaria

来源：

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2005年 / 7卷 / 01期

关键词：

surface photovoltage; time-resolved; numerical simulation; interface states;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a simple original algorithm for numerical simulation of super-bandgap SPV transients in semiconductors. It is applied to a p-Si/SiO2 interface with quasi-continuously distributed non-interacting interface states. The simulated SPV time dependence is compared with experimental results, and a reasonable agreement is found.

引用

页码：529 / 532

页数：4

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