High-pressure structures of Ge above 100 GPa

被引:0
作者
Takemura, K
Schwarz, U
Syassen, K
Christensen, NE
Hanfland, M
Novikov, DL
Loa, I
机构
[1] Natl Inst Res Inorgan Mat, Tsukuba, Ibaraki 3050044, Japan
[2] MPI Chem Phys Fester Stoffe, D-01187 Dresden, Germany
[3] MPI Festkorperforsch, D-70569 Stuttgart, Germany
[4] Aarhus Univ, Inst Phys & Astron, DK-8000 Aarhus C, Denmark
[5] European Synchrotron Radiat Facil, F-38043 Grenoble, France
[6] Arthur D Little Inc, Cambridge, MA 02140 USA
来源
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2001年 / 223卷 / 02期
关键词
D O I
10.1002/1521-3951(200101)223:2<385::AID-PSSB385>3.0.CO;2-E
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We have investigated structural phase transitions of Ge at pressures up to 190 GPa using monochromatic synchrotron X-ray diffraction. The phase appearing near 100 GPa is found to have an orthorhombic structure (space group Cmca, Z = 16 atoms per unit cell, isotypic to Si-VI). Ge further undergoes a sluggish transition to a hcp structure at around 160-180 GPa. With these new findings, the sequence of structural transitions observed fur Ge under pressure up to 190 GPa is similar to that of Si in the range up to 50 GPa. We have performed lull potential linear muffin tin orbital calculations of the volume-dependent total energies of Ge in different crystal structures. The calculated phase transitions are compared to the experimental results reported here.
引用
收藏
页码:385 / 390
页数:6
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共 27 条
[1]   LINEAR METHODS IN BAND THEORY [J].
ANDERSEN, OK .
PHYSICAL REVIEW B, 1975, 12 (08) :3060-3083
[2]   1ST-PRINCIPLES STUDY OF THE STRUCTURAL-PROPERTIES OF GE [J].
CHANG, KJ ;
COHEN, ML .
PHYSICAL REVIEW B, 1986, 34 (12) :8581-8590
[3]   HCP-TO-FCC TRANSITION IN SILICON AT 78-GPA AND STUDIES TO 100-GPA [J].
DUCLOS, SJ ;
VOHRA, YK ;
RUOFF, AL .
PHYSICAL REVIEW LETTERS, 1987, 58 (08) :775-777
[4]   EXPERIMENTAL-STUDY OF THE CRYSTAL STABILITY AND EQUATION OF STATE OF SI TO 248 GPA [J].
DUCLOS, SJ ;
VOHRA, YK ;
RUOFF, AL .
PHYSICAL REVIEW B, 1990, 41 (17) :12021-12028
[5]   Two-dimensional detector software: From real detector to idealised image or two-theta scan [J].
Hammersley, AP ;
Svensson, SO ;
Hanfland, M ;
Fitch, AN ;
Hausermann, D .
HIGH PRESSURE RESEARCH, 1996, 14 (4-6) :235-248
[6]   Crystal structure of the high-pressure phase silicon VI [J].
Hanfland, M ;
Schwarz, U ;
Syassen, K ;
Takemura, K .
PHYSICAL REVIEW LETTERS, 1999, 82 (06) :1197-1200
[7]   PHASES OF SILICON AT HIGH-PRESSURE [J].
HU, JZ ;
SPAIN, IL .
SOLID STATE COMMUNICATIONS, 1984, 51 (05) :263-266
[8]   CRYSTAL DATA FOR HIGH-PRESSURE PHASES OF SILICON [J].
HU, JZ ;
MERKLE, LD ;
MENONI, CS ;
SPAIN, IL .
PHYSICAL REVIEW B, 1986, 34 (07) :4679-4684
[9]   PREDICTION OF AN ORTHORHOMBIC PHASE OF GERMANIUM [J].
LEWIS, SP ;
COHEN, ML .
SOLID STATE COMMUNICATIONS, 1994, 89 (06) :483-486
[10]   SPECIFIC VOLUME MEASUREMENTS OF CU, MO, PD, AND AG AND CALIBRATION OF RUBY R1 FLUORESCENCE PRESSURE GAUGE FROM 0.06 TO 1 MBAR [J].
MAO, HK ;
BELL, PM ;
SHANER, JW ;
STEINBERG, DJ .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) :3276-3283