Field-free spin-orbit torque-induced switching of perpendicular magnetization in a ferrimagnetic layer with a vertical composition gradient

被引:165
作者
Zheng, Zhenyi [1 ,2 ,3 ]
Zhang, Yue [1 ]
Lopez-Dominguez, Victor [2 ]
Sanchez-Tejerina, Luis [4 ]
Shi, Jiacheng [2 ]
Feng, Xueqiang [1 ]
Chen, Lei [1 ]
Wang, Zilu [1 ]
Zhang, Zhizhong [1 ]
Zhang, Kun [1 ]
Hong, Bin [1 ]
Xu, Yong [1 ]
Zhang, Youguang [3 ]
Carpentieri, Mario [5 ]
Fert, Albert [1 ,6 ]
Finocchio, Giovanni [4 ]
Zhao, Weisheng [1 ]
Amiri, Pedram Khalili [2 ]
机构
[1] Beihang Univ, Beijing Adv Innovat Ctr Big Data & Brain Comp, Sch Integrated Circuit Sci & Engn, Fert Beijing Res Inst, Beijing, Peoples R China
[2] Northwestern Univ, Dept Elect & Comp Engn, Evanston, IL 60208 USA
[3] Beihang Univ, Sch Elect & Informat Engn, Beijing, Peoples R China
[4] Univ Messina, Dept Math & Comp Sci Phys Sci & Earth Sci, Messina, Italy
[5] Politecn Bari, Dipartimento Ingn Elettr & Informaz, Bari, Italy
[6] Univ Paris Saclay, Univ Paris Sud, CNRS, Unite Mixte Phys,Thales, Palaiseau, France
基金
中国国家自然科学基金; 美国国家科学基金会;
关键词
EXCHANGE;
D O I
10.1038/s41467-021-24854-7
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Current-induced spin-orbit torques (SOTs) are of interest for fast and energy-efficient manipulation of magnetic order in spintronic devices. To be deterministic, however, switching of perpendicularly magnetized materials by SOT requires a mechanism for in-plane symmetry breaking. Existing methods to do so involve the application of an in-plane bias magnetic field, or incorporation of in-plane structural asymmetry in the device, both of which can be difficult to implement in practical applications. Here, we report bias-field-free SOT switching in a single perpendicular CoTb layer with an engineered vertical composition gradient. The vertical structural inversion asymmetry induces strong intrinsic SOTs and a gradient-driven Dzyaloshinskii-Moriya interaction (g-DMI), which breaks the in-plane symmetry during the switching process. Micromagnetic simulations are in agreement with experimental results, and elucidate the role of g-DMI in the deterministic switching processes. This bias-field-free switching scheme for perpendicular ferrimagnets with g-DMI provides a strategy for efficient and compact SOT device design. Switching of ferrimagnets by current-induced spin-orbit torque is promising for spintronics, due to their high-speed dynamics and small macroscopic magnetization. Switching of perpendicularly magnetized materials, however, requires a bias field for symmetry breaking. Here, Zheng et al demonstrate field-free current-induced switching of perpendicular ferrimagnets, using a compositional gradient-driven Dzyaloshinskii-Moriya interaction.
引用
收藏
页数:9
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