Analytical study of electrostatic ion beam traps

被引:4
作者
Vallette, Alexandre [1 ]
Indelicato, P. [1 ]
机构
[1] Univ Paris 06, CNRS, Ecole Normale Super, Lab Kastler Brossel, F-75252 Paris 05, France
关键词
STORAGE-RING; SIMULATION; PHYSICS; DESIGN; DIFFUSION; CHARGE; FIELDS; LENS;
D O I
10.1103/PhysRevSTAB.13.114001
中图分类号
O57 [原子核物理学、高能物理学];
学科分类号
070202 ;
摘要
The use of electrostatic ion beam traps requires one to set many potentials on the electrodes (ten in our case), making the tuning much more difficult than with quadrupole traps. In order to obtain the best trapping conditions, an analytical formula giving the electrostatic potential inside the trap is required. In this paper, we present a general method to calculate the analytical expression of the electrostatic potential in any axisymmetric set of electrodes. We use conformal mapping to simplify the geometry of the boundary. The calculation is then performed in a space of simple geometry. We show that this method, providing good accuracy, allows one to obtain the potential on the axis as an analytic function of the potentials applied to the electrodes, thus leading to fast, accurate, and efficient calculations. We conclude by presenting stability maps depending on the potentials that enabled us to find the good trapping conditions for O4+ at much higher energies than what has been achieved until now.
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页数:9
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