Three-dimensional analysis of dislocation multiplication during thermal process of grown silicon with different orientations

被引：5

作者：

Gao, B. ^{[1
,2
]}

Nakano, S. ^{[1
]}

Harada, H. ^{[1
]}

Miyamura, Y. ^{[1
]}

Kakimoto, K. ^{[1
]}

机构：

[1] Kyushu Univ, Res Inst Appl Mech, Kasuga, Fukuoka 8168580, Japan

[2] SINTEF, Mat & Chem, Trondheim, Norway

来源：

JOURNAL OF CRYSTAL GROWTH | 2017年 / 474卷

关键词：

Computer simulation; Line defects; Stresses; Semiconducting silicon; MONO-LIKE SILICON; SINGLE-CRYSTAL; MONOCRYSTALLINE SILICON; CZOCHRALSKI GROWTH; STRESS ANALYSIS; GENERATION;

D O I：

10.1016/j.jcrysgro.2016.12.059

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We used an advanced 3D model to study the effect of crystal orientation on the dislocation multiplication in single-crystal silicon under accurate control of the cooling history of temperature. The incorporation of the anisotropy effect of the crystal lattice into the model has been explained in detail, and an algorithm for accurate control of the temperature in the furnace has also been presented. This solver can dynamically track the history of dislocation generation for different orientations during thermal processing of single-crystal silicon. Four orientations, [001], [110], [111], and [112], have been examined, and the comparison of dislocation distributions has been provided.

引用

页码：121 / 129

页数：9

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