High-speed modulation of 850 nm InGaAsP/InGaP strain-compensated VCSELs

被引：9

作者：

Kuo, HC ^{[1
]}

Chang, YS ^{[1
]}

Lai, FY ^{[1
]}

Hsueh, TH ^{[1
]}

Laih, LH ^{[1
]}

Wang, SC ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu, Taiwan

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 14期

关键词：

Distributed Bragg reflector - Modulation bandwidth - Vertical cavity surface emitting lasers;

D O I：

10.1049/el:20030672

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High performance 850 um InGaAsP/InGaP strain-compensated vertical cavity surface emitting lasers (VCSELs) are demonstrated with superior output characteristics and modulation bandwidths up to 12.5 Gbit/s from 25 to 85degreesC.

引用

页码：1051 / 1053

页数：3

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