共 23 条
- [1] [Anonymous], 2014, TOYOTA GLOBAL NEWSRO
- [2] Characterization of Diverse Gate Oxides on 4H-SiC 3D Trench-MOS Structures [J]. SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 : 691 - +
- [3] Reliability Aspects of High Voltage 4H-SiC JBS Diodes [J]. SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 935 - +
- [4] The Impact of Schottky Barrier Tunneling on SiC-JBS Performance [J]. SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, 615-617 : 667 - 670
- [5] Fujibayashi H., 2013, INT C SIL CARB REL M, P108
- [6] Impact of Surface Morphology above Threading Dislocations on Leakage Current in 4H-SiC Diodes [J]. SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, 717-720 : 911 - +
- [9] Present status and future prospects for electronics in electric vehicles/hybrid electric vehicles and expectations for wide-bandgap semiconductor devices [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2008, 245 (07): : 1223 - 1231
- [10] Present Status and Future Prospects for Electronics in EVs/HEVs and Expectations for Wide Bandgap Semiconductor Devices [J]. SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 889 - 893