Decrease of oxygen vacancy by Zn-doped for improving solar-blind photoelectric performance in β-Ga2O3 thin films

被引：67

作者：

Guo, Daoyou ^{[1
,2
,3
]}

Qin, Xinyuan ^{[1
]}

Lv, Ming ^{[1
]}

Shi, Haoze ^{[1
]}

Su, Yuanli ^{[1
]}

Yao, Guosheng ^{[1
]}

Wang, Shunli ^{[1
]}

Li, Chaorong ^{[1
]}

Li, Peigang ^{[1
,2
,3
]}

Tang, Weihua ^{[2
,3
]}

机构：

[1] Zhejiang Sci Tech Univ, Dept Phys, Ctr Optoelect Mat & Devices, Hangzhou 310018, Zhejiang, Peoples R China

[2] Beijing Univ Posts & Telecommun, Sch Sci, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China

[3] Beijing Univ Posts & Telecommun, Sch Sci, Lab Optoelect Mat & Devices, Beijing 100876, Peoples R China

来源：

ELECTRONIC MATERIALS LETTERS | 2017年 / 13卷 / 06期

基金：

中国国家自然科学基金;

关键词：

beta-Ga2O3; films; Zn-doped; oxygen vacancy; solar-blind photodetector; EPITAXIAL-GROWTH; FABRICATION; EMISSION;

D O I：

10.1007/s13391-017-7072-y

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Highly (201) oriented Zn-doped beta-Ga2O3 thin films with different dopant concentrations were grown on (0001) sapphire substrates by radio frequency magnetron sputtering. With the increase of Zn dopant concentration, the crystal lattice expands, the energy band gap shrinks, and the oxygen vacancy concentration decreases. Both the metal semiconductor metal (MSM) structure photodetectors based on the pure and Zn-doped beta-Ga2O3 thin films exhibit solar blind UV photoelectric property. Compared to the pure beta-Ga2O3 photodetector, the Zn-doped one exhibits a lower dark current, a higher photo/dark current ratio, a faster photoresponse speed, which can be attributed to the decreases of oxygen vacancy concentration.

引用

收藏

页码：483 / 488

页数：6

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