Single-Event Characterization of a Stratix® 10 FPGA Using Neutron Irradiation

被引:0
作者
Keller, Andrew M. [1 ]
Wirthlin, Michael J. [1 ]
机构
[1] Brigham Young Univ, Elect & Comp Engn Dept, NSF Ctr Space High Performance & Resilient Comp S, Provo, UT 84602 USA
来源
2019 IEEE RADIATION EFFECTS DATA WORKSHOP (REDW) | 2019年
基金
美国国家科学基金会;
关键词
D O I
暂无
中图分类号
O35 [流体力学]; O53 [等离子体物理学];
学科分类号
070204 ; 080103 ; 080704 ;
摘要
FPGAs are being used in data center applications in large quantities. Single-event upsets (SEUs) occur more frequently within large-scale deployments of SRAM-based FPGAs. This work estimates the neutron cross section for SEUs in the configuration memory and memory blocks of a 14-nm FinFET Stratix 10 FPGA. SEU data was collected using a custom SEU data collection system. The developed system takes advantage of SEU mitigation features available on the device. The New York City FIT rate for SEUs is estimated to be 3.2 FIT per Mbit for configuration memory and 7.1 FIT per Mbit for memory blocks.
引用
收藏
页码:173 / 178
页数:6
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