Nanofabrication by electron beam lithography and its applications: A review

被引:615
作者
Chen, Yifang [1 ]
机构
[1] Fudan Univ, Sch Informat Sci & Engn, Nanolithogrophy & Applicat Res Grp, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China
基金
英国工程与自然科学研究理事会;
关键词
Nanofabrication; Electron beam lithography; Nanostructure; Nanoelectronics; Nanophotonics; Metamaterial; CHEMICALLY AMPLIFIED RESIST; ONE-DIMENSIONAL TRANSPORT; CHIRAL META-MATERIALS; HIGH-ASPECT-RATIO; T-GATES; HYDROGEN SILSESQUIOXANE; MECHANICAL-PROPERTIES; COULOMB-BLOCKADE; NANOIMPRINT LITHOGRAPHY; FABRICATION PROCESS;
D O I
10.1016/j.mee.2015.02.042
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This review covers a wide range of nanofabrication techniques developed for nanoelectronic devices, nanophotonic metamaterials and other nanostructures, based on electron beam lithography (EBL). Differing from earlier publications, this review particularly focuses on how to apply the property of EBL resists for constructing multilayer stacks towards pattern transfer. Most frequently used resists and their lithography property are first introduced, followed by categorizing multiple layers of resists for fulfilling various tasks in nanofabrication. Particularly, T shape gates for high electron mobility transistors (HEMTs), metallic tunneling junctions (MTJs) in single electron tunneling transistors (SETs), chiral structures and photonic crystals for optical metamaterials, templates for NIL and etching masks for nanoscale reactive ion etch (RIE) are reviewed. In the description of process development, scientific advances behind these fabricated nanostructures are described at the same time. By this way, this review aims to indicate that the development of nanofabrication techniques is essential for the rapid advances of nanoscience as a whole. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码:57 / 72
页数:16
相关论文
共 116 条
[1]  
Ahlskog M, 2001, AIP CONF PROC, V590, P141, DOI 10.1063/1.1420074
[2]   Novel electron beam lithography technique for submicron T-gate fabrication [J].
Ahmed, MM ;
Ahmed, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (02) :306-310
[3]   Nanowire to Single-Electron Transistor Transition in Trigate SOI MOSFETs [J].
Akhavan, Nima Dehdashti ;
Afzalian, Aryan ;
Lee, Chi-Woo ;
Yan, Ran ;
Ferain, Isabelle ;
Razavi, Pedram ;
Yu, Ran ;
Fagas, Giorgos ;
Colinge, Jean-Pierre .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (01) :26-32
[4]   Generation of traveling surface plasmon waves by free-electron impact [J].
Bashevoy, M. V. ;
Jonsson, F. ;
Krasavin, A. V. ;
Zheludev, N. I. ;
Chen, Y. ;
Stockman, M. I. .
NANO LETTERS, 2006, 6 (06) :1113-1115
[5]  
Bayindir M., 2001, PHYS REV B, V63
[6]   Engineering Substrate Topography at the Micro- and Nanoscale to Control Cell Function [J].
Bettinger, Christopher J. ;
Langer, Robert ;
Borenstein, Jeffrey T. .
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2009, 48 (30) :5406-5415
[7]   Fabrication and characterization of single-electron transistors based on Al/AlOx/Al and Nb/AlOx/Nb tunnel junctions [J].
Bluthner, K ;
Gotz, M ;
Krech, W ;
Muhlig, H ;
Wagner, T ;
Fuchs, HJ ;
Schelle, D ;
Fritzsch, L ;
Nachtmann, B ;
Nowack, A .
JOURNAL DE PHYSIQUE IV, 1996, 6 (C3) :163-167
[8]   Performance characterization of negative resists for sub-10-nm electron beam lithography [J].
Bonam, R. ;
Verhagen, P. ;
Munder, A. ;
Hartley, J. .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2010, 28 (06) :C6C34-C6C40
[9]   Flexible fabrication and applications of polymer nanochannels and nanoslits [J].
Chantiwas, Rattikan ;
Park, Sunggook ;
Soper, Steven A. ;
Kim, Byoung Choul ;
Takayama, Shuichi ;
Sunkara, Vijaya ;
Hwang, Hyundoo ;
Cho, Yoon-Kyoung .
CHEMICAL SOCIETY REVIEWS, 2011, 40 (07) :3677-3702
[10]   0.2 MICRON LENGTH T-SHAPED GATE FABRICATION USING ANGLE EVAPORATION [J].
CHAO, PC ;
KU, WH ;
SMITH, PM ;
PERKINS, WH .
IEEE ELECTRON DEVICE LETTERS, 1983, 4 (04) :122-124