Reconfigurable threshold logic gates with nanoscale DG-MOSFETs

被引:2
作者
Kaya, Savas [1 ]
Harned, Hesham F. A.
Ting, Darwin T.
Creech, Gregory
机构
[1] Ohio Univ, Rush Coll Engn & Technol, Sch Elect Engn & Comp Sci, Athens, OH 45701 USA
[2] WPAFB, Air Force Res Lab Dayton, Sensors Directorate, Wright Patterson AFB, OH 45433 USA
关键词
threshold logic; double-gate MOSFETs; SOI; reconfigurable logic systems;
D O I
10.1016/j.sse.2007.08.011
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The benefits in using double-gate (DG) MOSFETs as components of threshold logic gates (TLG) have been analyzed for the first time. A novel, variable-weight DG-TLG has also been proposed, which can greatly widen the range of reconfigurable functions accessible to users. Both fixed and variable-weight DG-TLG circuits operate correctly at a low supply voltage of 1.0 V, and outperform the conventional CMOS equivalents in terms of the most important metrics such as power, speed and area. It is found that variable-weight DG-TLG circuits with analog weight and threshold control have attractive features such as expanded TLG functionality, reduced transistor count, low programming voltages and power-scaling capability, particularly for circuits with four or fewer inputs. (C) 2007 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1301 / 1307
页数:7
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