Tin nitride thin films with room-temperature visible emission

被引：1
|
作者：
Takahashi, N [1 ]
Nakamura, T [1 ]
机构：
[1] Shizuoka Univ, Fac Engn, Dept Mat Sci & Technol, Hamamatsu, Shizuoka 4328561, Japan
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 2005年 / 8卷 / 04期
关键词：
D O I：
10.1149/1.1869154
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Growth of tin nitride with high crystal quality at atmospheric pressure has been examined by means of halide chemical vapor deposition. This is the first time that the photoluminescence spectra of the tin nitride thin film prepared under atmospheric pressure showed at 615.0 nm at room temperature. (C) 2005 The Electrochemical Society.
引用
收藏
页码：C63 / C64
页数：2
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