Atomic Layer Deposition of ZnO on InP Quantum Dot Films for Charge Separation, Stabilization, and Solar Cell Formation

被引：30

作者：

Crisp, Ryan W. ^{[1
]}

Hashemi, Fatemeh S. M. ^{[1
]}

Alkemade, Jordi ^{[1
]}

Kirkwood, Nicholas ^{[1
]}

Grimaldi, Gianluca ^{[1
]}

Kinge, Sachin ^{[2
]}

Siebbeles, Laurens D. A. ^{[1
]}

van Ommen, J. Ruud ^{[1
]}

Houtepen, Arjan J. ^{[1
]}

机构：

[1] Delft Univ Technol, Dept Chem Engn, NL-2629 HZ Delft, Netherlands

[2] Toyota Motor Europe Mat Res & Dev, B-1930 Zaventem, Belgium

来源：

ADVANCED MATERIALS INTERFACES | 2020年 / 7卷 / 04期

基金：

欧洲研究理事会;

关键词：

charge transport; LEDs; p-n junctions; quantum dots; solar cells; time-resolved microwave conductivity; CARRIER MULTIPLICATION; ATMOSPHERIC-PRESSURE; AT-ZNSES; CDTE; EFFICIENCY; DIFFUSION; TIO2; PHOTOCONDUCTIVITY; PARTICLES; EXCITONS;

D O I：

10.1002/admi.201901600

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

To improve the stability and carrier mobility of quantum dot (QD) optoelectronic devices, encapsulation or pore infilling processes are advantageous. Atomic layer deposition (ALD) is an ideal technique to infill and overcoat QD films, as it provides excellent control over film growth at the sub-nanometer scale and results in conformal coatings with mild processing conditions. Different thicknesses of crystalline ZnO films deposited on InP QD films are studied with spectrophotometry and time-resolved microwave conductivity measurements. High carrier mobilities of 4 cm(2) (V s)(-1) and charge separation between the QDs and ZnO are observed. Furthermore, the results confirm that the stability of QD thin films is strongly improved when the inorganic ALD coating is applied. Finally, proof-of-concept photovoltaic devices of InP QD films are demonstrated with an ALD-grown ZnO electron extraction layer.

引用

页数：8

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